| 摘要 |
A high frequency semiconductor device includes: a field effect transistor including gate terminal electrodes, source terminal electrodes, and a drain terminal electrode; an input circuit pattern and an output circuit pattern which are disposed adjoining of the field effect transistor; a plurality of input bonding wires configured to connect the plurality of the gate terminal electrodes and the input circuit pattern; and a plurality of output bonding wires configured to connect the drain terminal electrode and the output circuit pattern, which makes matching an input/output signal phase by adjusting an inductance distribution of a plurality of input/output bonding wires, and improves gain and output power, and suppresses an oscillation by unbalanced operation of each FET cell.
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