发明名称 |
BURIED CAPACITOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF CHANGING CAPACITANCE THEREOF |
摘要 |
Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.
|
申请公布号 |
US2010142115(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090499762 |
申请日期 |
2009.07.08 |
申请人 |
|
发明人 |
BAE HYUN-CHEOL;CHOI KWANG-SEONG;HONG JU YEON;MOON JONG TAE;JUN YONG IL |
分类号 |
H01G5/00;B32B38/04;H01G7/00 |
主分类号 |
H01G5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|