发明名称 BURIED CAPACITOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF CHANGING CAPACITANCE THEREOF
摘要 Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.
申请公布号 US2010142115(A1) 申请公布日期 2010.06.10
申请号 US20090499762 申请日期 2009.07.08
申请人 发明人 BAE HYUN-CHEOL;CHOI KWANG-SEONG;HONG JU YEON;MOON JONG TAE;JUN YONG IL
分类号 H01G5/00;B32B38/04;H01G7/00 主分类号 H01G5/00
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