METHOD FOR FABRICATING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present disclosure relates to a method for fabricating a group III nitride semiconductor light-emitting device, comprising the steps of: providing a substrate; forming a first buffer layer on the substrate; forming a defect curing metal layer on the first buffer layer; and melting the defect curing metal layer, and enabling the molten defect curing metal layer to flow to the defects of the first buffer layer.