SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device comprising: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer, and which generates light by electron-hole recombination; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode which is extended to the first electrode from the bonding pad, and which electrically interconnects the bonding pad and the first electrode.