| 摘要 |
PURPOSE: An aluminum metal wiring forming method for manufacturing a semiconductor is provided to prevent a corrosion of the metal by effectively permeating a H2O gas between minute lines by rotating a wafer according to a rotating chuck. CONSTITUTION: An aluminum metal(30) is deposited on a semiconductor substrate(10) deposited with an insulating film(20). A photolithography and an etching process are progressed on the wafer. A H2O gas treatment is implemented by rotating the wafer with completing the etching process. An exposure film(40) is eliminated by progressing a plasma processing by a O2 gas in a state of fixing the wafer.
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