| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics, such as, reduction of an operational voltage, increasing the efficiency of external quantum, and reduction of an oscillation threshold current density, in a nitride semiconductor laser device having a light emission wavelength of ≥430 nm. Ž<P>SOLUTION: In the nitride semiconductor laser device, an n-type AlGaN cladding layer, a GaN layer, a first InGaN optical guide layer, a light emission layer, a second InGaN optical guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN cladding layer are formed on a nitride semiconductor substrate in this order. The n-type AlGaN cladding layer has a 3-5% relative proportion of Al and a thickness of 1.8-2.5 μm, the first and the second InGaN optical guide layer have a 3-6% relative proportion of In, the thickness of the first optical guide layer is thicker than that of the second optical guide layer and within a range of 120-160 nm, and the p-type AlGaN layer is brought into contact with the p-type AlGaN cladding layer and has a 10-35% relative proportion of Al which is larger than that of the p-type cladding layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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