| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an infrared sensor, removing a residue without etching a hollow structure part, and preventing dispersion of a characteristic between each infrared sensor. SOLUTION: This method for manufacturing the infrared sensor having the hollow structure part includes: a process for forming an insulating layer including metal wiring on a silicon substrate; a process for forming a sacrifice layer including an organic material on the insulating layer; a process for forming on the sacrifice layer, an infrared absorption part including an insulator, and supported on the sacrifice layer; an etching process for forming a hollow part by removing a silicon substrate partially; and an ashing process for removing the sacrifice layer selectively. The ashing process uses plasma of mixed gas of gas including oxygen atoms, gas including nitrogen atoms, and gas including fluorine atoms. COPYRIGHT: (C)2010,JPO&INPIT
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