发明名称 |
METHOD FOR PREPARING CRYSTAL OF NITRIDE OF METAL BELONGING TO 13 GROUP OF PERIODIC TABLE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A Periodic Table Group 13 metal nitride crystal is grown by causing a reaction of a Periodic Table Group 13 metal phase with a nitride-containing molten salt phase to proceed while removing a by-product containing a metal element except for Periodic Table Group 13 metals, from the reaction field. According to this process, a high-quality Periodic Table Group 13 metal nitride bulk crystal can be produced under low pressure or atmospheric pressure.
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申请公布号 |
US2010139551(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20050631394 |
申请日期 |
2005.07.04 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
ARITA YOJI;SEKI YOSHINORI;TAHARA TAKESHI;SATO YAZURU |
分类号 |
C30B19/02 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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