发明名称 |
TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS |
摘要 |
Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
|
申请公布号 |
US2010140717(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20100705248 |
申请日期 |
2010.02.12 |
申请人 |
LAVOIE ADRIEN R;DUBIN VALERY M;PLOMBON JOHN J;DOMINGUEZ JUAN E;SIMKA HARSONO S;HAN JOSEPH H;DOCZY MARK |
发明人 |
LAVOIE ADRIEN R.;DUBIN VALERY M.;PLOMBON JOHN J.;DOMINGUEZ JUAN E.;SIMKA HARSONO S.;HAN JOSEPH H.;DOCZY MARK |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|