A method for cutting a semiconductor wafer by generating a crack within the wafer, and a system thereof, are provided. The method comprises irradiating a laser beam towards a surface of the wafer and converging the laser beam to form a focal point so that a focal volume defined by the focal point and a boundary of the laser beam within the wafer is formed. Energy encompassed within the focal volume causes the wafer located at the periphery of the focal volume to contract faster than the wafer located within the focal volume, thereby generating a crack within the wafer.
申请公布号
WO2010064997(A1)
申请公布日期
2010.06.10
申请号
WO2009SG00467
申请日期
2009.12.04
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;WANG, ZHONGKE;CHEN, TAO;ZHENG, HONGYU