| 摘要 |
FIELD: physics. ^ SUBSTANCE: in the method of making a multilayer ohmic contact for a photoelectric converter based on gallium arsenide with electron conduction, the topology of photosensitive regions is formed through photolithography and the surface of the structure of the photoelectric converter is etched. A 5-30 nm thick titanium layer, a 25-90 nm thick germanium layer, a 25-60 nm thick platinum layer and a gold layer are successively deposited on the etched surface. The ratio of the thickness of the germanium layer to the thickness of the platinum layer is equal to (1.0-1.9):1. After deposition of the layers, the photoresist is removed and the contact structure is annealed. The platinum layer may be deposited onto the titanium layer first, followed by the germanium layer. ^ EFFECT: reduced occurrence depth of the contact-semiconductor boundary surface, improved quality due to its improved planarity, improved surface morphology of the contact while maintaining small resistance values of the contact, higher reproducibility of the technology of making contacts with good characteristics and improved characteristics of devices. ^ 22 cl, 2 dwg, 6 ex |
