| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve resist dimension accuracy and to improve a yield in the production of a semiconductor device. <P>SOLUTION: A first pattern and a second pattern different from each other are extracted from a first mask pattern created on the basis of a first design pattern; a best focus difference between the first pattern and the second pattern is calculated on the basis of first exposure conditions; the best focus difference is compared with a predetermined threshold; and when the best focus difference is larger than the threshold, the first design pattern is corrected to create a second design pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT |
