| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a thin-film transistor which has, for example, a polycrystalline silicon layer with high film quality as an active layer. SOLUTION: A second film (220) is formed from a first film (211) by subjecting the first film (211) to slice etching processing so as to eliminate a corner part (212) formed of a top surface (211t) of the first film (211) and a side surface (211s) of the first film (211) which crosses the top surface (211t). Namely, the sectional shape of a corner part (222) of the second film (220) is rounder than a corner part (212) of the first film (211), or formed along a curved line. Here, the slice etching processing is to etch the first film (211) more gently, in other words, more mildly than normal wet etching and dry etching by bringing an etchant into contact with the first film (211) from on the first film (211). COPYRIGHT: (C)2010,JPO&INPIT |
