发明名称 RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS
摘要 <p>PURPOSE: A resist protective film composition and a method for forming a pattern using the same are provided to obtain excellent transparency to radiation having a wavelength less than 200 nm and to prevent water from being permeated. CONSTITUTION: A resist protective film composition includes a polymer having a repeating unit which is marked as a chemical formula 1. In the chemical formula 1, R^1 is a hydrogen atom, a methyl group, or trifluoromethyl group. R^2a and R^2b are hydrogen atoms or a linear, branched, or cyclic alkyl group having carbon number of 1 ~ 15. R^2a and R^2b are capable of forming a ring by being combined. R^3 is a single bond or a linear, branched, or cycling alkylene group having carbon number of 1 ~ 15.</p>
申请公布号 KR20100062948(A) 申请公布日期 2010.06.10
申请号 KR20090117716 申请日期 2009.12.01
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HARADA YUJI;HATAKEYAMA JUN;HASEGAWA KOJI
分类号 G03F7/11;G03F7/004 主分类号 G03F7/11
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