发明名称 |
POWER CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING IT |
摘要 |
PURPOSE: A power control circuit and a semiconductor memory device thereof are provided to reduce the current consumption by disconnecting a power source supplied to an internal circuit when all the bank of DRAM are pre-charged after executing a read and write command. CONSTITUTION: A power control circuit outputs a power supply voltage during a read operation period and write operation period. An internal circuit(4) is operated by receiving a power voltage. A write-off signal generator(32) generates an enabled write-off signal. A read-off signal generator(33) generates an enabled read-off signal. A switching signal generator(34) generates a switching signal after receiving a write-off signal and a read-off signal. |
申请公布号 |
KR20100062518(A) |
申请公布日期 |
2010.06.10 |
申请号 |
KR20080121187 |
申请日期 |
2008.12.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG, TAE JIN |
分类号 |
G11C11/4074;G11C5/14;G11C7/22;G11C11/409 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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