发明名称 POWER CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING IT
摘要 PURPOSE: A power control circuit and a semiconductor memory device thereof are provided to reduce the current consumption by disconnecting a power source supplied to an internal circuit when all the bank of DRAM are pre-charged after executing a read and write command. CONSTITUTION: A power control circuit outputs a power supply voltage during a read operation period and write operation period. An internal circuit(4) is operated by receiving a power voltage. A write-off signal generator(32) generates an enabled write-off signal. A read-off signal generator(33) generates an enabled read-off signal. A switching signal generator(34) generates a switching signal after receiving a write-off signal and a read-off signal.
申请公布号 KR20100062518(A) 申请公布日期 2010.06.10
申请号 KR20080121187 申请日期 2008.12.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, TAE JIN
分类号 G11C11/4074;G11C5/14;G11C7/22;G11C11/409 主分类号 G11C11/4074
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