发明名称 POWER SEMICONDUCTOR MODULE WITH SEGMENTED BASE PLATE
摘要 <P>PROBLEM TO BE SOLVED: To properly cool a power semiconductor module. <P>SOLUTION: The power semiconductor module includes a segmented base plate 35 and at least two circuit carriers 30. The base plate 35 includes at least two base plate segments 35a, 35b spaced apart from one another. Each of the circuit carriers 30 includes a ceramic substrate 31 provided with at least an upper side metal layer (a first metal layer) 32. Each of the circuit carriers 30 is arranged on each of the substrate segments 35a, 35b. At least two of the circuit carriers are spaced apart from one another. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010130015(A) 申请公布日期 2010.06.10
申请号 JP20090267672 申请日期 2009.11.25
申请人 INFINEON TECHNOLOGIES AG 发明人 TSCHIRBS ROMAN
分类号 H01L25/07;H01L23/36;H01L25/18;H05K1/14 主分类号 H01L25/07
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