| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure which suppresses an increase in contact resistance even when a columnar semiconductor layer is microfabricated and highly integrated. SOLUTION: The semiconductor device includes a substrate (semiconductor substrate 1), a semiconductor columnar part (columnar semiconductor layer 3) provided on the semiconductor substrate 1, a contact columnar part (contact layer 7) provided in contact with a top surface of the semiconductor columnar part and having a diameter equal to or smaller than that of the columnar semiconductor layer 3, and a recessed part provided on the top surface. COPYRIGHT: (C)2010,JPO&INPIT |
