发明名称 SUBSTRATE TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment device which confirms, on a digital type gas pattern panel, current values of gas pressure, vacuum pressure, a solution remaining quantity, piping temperature, and a gas flow rate, and changes the setting of the gas flow rate. Ž<P>SOLUTION: This substrate treatment device is equipped with: a treatment chamber for treating a substrate; a heating means 44 to heat the substrate; a gas supply system for supplying a predetermined treatment gas in the treatment chamber; an exhaust system for exhausting the atmosphere in the treatment chamber; an operation part 29 having a digital type gas pattern panel 47; and control parts 28, 31 for executing a predetermined function by receiving an instruction from the digital type gas pattern panel. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010129956(A) 申请公布日期 2010.06.10
申请号 JP20080306216 申请日期 2008.12.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 UMEMOTO MAMORU;KONYA TADASHI
分类号 H01L21/31;H01L21/22 主分类号 H01L21/31
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