| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem where fluctuation of the potential difference in an output transistor due to an inductance component or the like of a load is not controlled in a conventional semiconductor device. SOLUTION: The semiconductor device includes: the output transistor T1 in which the supply of power supply to the load is controlled in accordance with a control voltage applied to a gate; a voltage control circuit SB which is connected between gate and drain of the T1 and in which a conductive state is controlled in accordance with the potential difference between source and drain of the T1; a voltage control detection circuit SD which outputs a voltage control detection signal based on the conductive state of the SB; the transistor T4 which is connected between the gate and source of the T1 and is controlled to be ON or OFF in accordance with the voltage control detection signal; the transistor T5 which is connected to the T4 in series and is controlled to be ON or OFF in accordance with a temperature situation of the T1; and the transistor T3 connected to the T4 and the T5 in parallel. The fluctuation of the potential difference in the T1 is controlled by such a circuit constitution. COPYRIGHT: (C)2010,JPO&INPIT
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