发明名称 |
Image Sensor Devices Having Dual-Gated Charge Storage Regions Therein |
摘要 |
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals. |
申请公布号 |
US2010141821(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090632989 |
申请日期 |
2009.12.08 |
申请人 |
FOSSUM ERIC R;JIN YOUNG GU;HWANG SOO JUNG;CHA DAE KIL;PARK YOON DONG;AHN JUNG CHAK;MOON KYOUNG SIK |
发明人 |
FOSSUM ERIC R.;JIN YOUNG GU;HWANG SOO JUNG;CHA DAE KIL;PARK YOON DONG;AHN JUNG CHAK;MOON KYOUNG SIK |
分类号 |
H01L31/14 |
主分类号 |
H01L31/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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