NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE DEVICE
摘要
<p>Provided is a variable-resistance type nonvolatile storage device which can change resistance thereof stably and accurately at a low voltage. A method for manufacturing the device is also disclosed. The nonvolatile storage device includes: a substrate (100); a first electrode (101); an inter-layer insulation layer (102); a memory cell hole (103) formed in the inter-layer insulation layer; a first variable-resistance layer (104a) formed at least at the bottom of the memory cell hole and connected to a first electrode; a second variable-resistance layer (104b) formed on the first variable-resistance layer (104a) in the memory cell hole (103); and a second electrode (105). The first variable-resistance layer (104a) and the second variable-resistance layer (104b) are made from the same type of metal oxide. The first variable-resistance layer (104a) has a greater oxygen content ratio than the second variable-resistance layer (104b).</p>
