MULTI-THICKNESS SEMICONDUCTOR WITH FULLY DEPLETED DEVICES AND PHOTONIC INTEGRATION

摘要

A method for semiconductor device fabrication includes thinning a region of a semiconductor wafer upon which the device is to be formed, subsequently forming on the thick region one or more photonic and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices An isolation area may be formed between the thin region and the thick region.