| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing damage to a gate insulation film. SOLUTION: In a manufacturing process of a semiconductor device 1, a silicon substrate 2 is separated into an NMOS formation region 8 and a PMOS formation region 9, and a high-permittivity insulation film 31 is formed on the surface of the silicon substrate 2. A gate electrode 12 for NMOS formed of an electrode material 34 for NMOS is formed at the NMOS formation region 8. Then, a resist mask 35 having an opening 36 is formed at the silicon substrate 2. After that, an electrode material 37 for PMOS is deposited on the resist mask 35 and on the PMOS formation region 9 exposed from the opening 36. Then, the electrode material 37 for PMOS on the resist mask 35 is lifted off together with the resist mask 35, thus forming a gate electrode 22 for PMOS. COPYRIGHT: (C)2010,JPO&INPIT |
