| 摘要 |
PURPOSE: A top light emitting type organic electroluminescent device and a manufacturing method thereof are provided to prevent the degradation of a thin film transistor by implementing a X-ray shielding structure. CONSTITUTION: A separated wall(148) is overlapped with the edge of the connecting electrode and is formed in the boundary of a pixel region. An X-ray shielding layer(153) is automatically separated with the partition wall according to each pixel region. A first electrode(158) is formed in the upper part of the X-ray shielding layer. A bank(160) completely covers the partition wall and is contact with the edge of the first electrode. An organic light emitting layer(162) is formed in the upper part the first electrode. A second electrode(165) is formed in the front side of the upper part of the organic light emitting layer.
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