| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an internal electrode is hard to be disconnected or peeled by stress concentration. <P>SOLUTION: The semiconductor device includes a semiconductor substrate 11, a through electrode 17 which is so provided as to penetrate the semiconductor substrate 11 in thickness direction, an internal electrode 12 which is provided at the portion of surface of the semiconductor substrate 11 which the through electrode 17 reaches and is electrically connected to the through electrode 17, a first protective film 13A that covers the surface of the semiconductor substrate 11 except for a part of the internal electrode 12, a second protective film 13B provided to be separated from the first protective film 13A at the portion of the internal electrode 12 that is not covered with the first protective film 13A, and a metal wiring 18 which is provided on the backside of the semiconductor substrate 11 and is electrically connected to the through electrode 17. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
