| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MONOS type flash memory securing a required amount of electric charge stored sites in an electric charge stored film. Ž<P>SOLUTION: The nonvolatile semiconductor storage device includes source-drain regions 10a, 10b formed by spacing apart from each other on the surface of a semiconductor layer 10, a tunnel insulating film 11 arranged on the semiconductor layer 10 between the source-drain regions 10a, 10b, an insulating electric charge stored film 12 arranged on the tunnel insulating film 11 and containing an isotope having a ratio different from an isotope ratio in a natural state, a block insulating film 14 arranged on the electric charge stored film 12, and a control gate electrode 15 arranged on the block insulating film 14. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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