发明名称 Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO
摘要 A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.
申请公布号 US2010142098(A1) 申请公布日期 2010.06.10
申请号 US20080314346 申请日期 2008.12.09
申请人 TDK CORPORATION 发明人 HARA SHINJI;TSUCHIYA YOSHIHIRO;CHOU TSUTOMU;MIZUNO TOMIHITO
分类号 G11B5/33;B05D5/12 主分类号 G11B5/33
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