发明名称 |
COMPOUND-TYPE THIN FILM, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE USING THE SAME |
摘要 |
An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.
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申请公布号 |
US2010139762(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20080601684 |
申请日期 |
2008.05.02 |
申请人 |
NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY;ROHM CO., LTD.;TOKYO ELECTRON LIMITED;UBE INDUSTRIES, LTD. |
发明人 |
OHMI TADAHIRO;ASAHARA HIROKAZU;INOKUCHI ATSUTOSHI;WATANUKI KOHEI |
分类号 |
H01L31/04;B32B9/04;C23C16/513;C30B25/02;H01L33/00;H01L33/02 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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