发明名称 |
SEMICONDUCTOR DEVICES WITH CURRENT SHIFTING REGIONS AND RELATED METHODS |
摘要 |
A semiconductor device may include a semiconductor buffer layer having a first conductivity type and a semiconductor mesa having the first conductivity type on a surface of the buffer layer. In addition, a current shifting region having a second conductivity type may be provided adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, and the first and second conductivity types may be different conductivity types. Related methods are also discussed. |
申请公布号 |
WO2010065334(A2) |
申请公布日期 |
2010.06.10 |
申请号 |
WO2009US65251 |
申请日期 |
2009.11.20 |
申请人 |
CREE, INC.;ZHANG, QINGCHUN;AGARWAL, ANANT, K. |
发明人 |
ZHANG, QINGCHUN;AGARWAL, ANANT, K. |
分类号 |
H01L29/24;H01L21/331;H01L29/737 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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