发明名称 NONVOLATILE MEMORY WITH SELF RECOVERY
摘要 A nonvolatile memory array includes two or more devices, each device containing data that is scrambled using a different scrambling scheme. When the same data is provided and stored in both devices, different data patterns occur in each device, so that if one of the patterns causes data pattern induced errors, the original data can be recreated from another copy that does not share the same data pattern.
申请公布号 EP2193523(A1) 申请公布日期 2010.06.09
申请号 EP20080833414 申请日期 2008.09.22
申请人 SANDISK CORPORATION 发明人 CHENG, STEVEN, S.
分类号 G11C29/00;G06F11/10;G06F11/16;G06F11/20 主分类号 G11C29/00
代理机构 代理人
主权项
地址