| 摘要 |
A memory element having a configuration in which contents of recorded data can be judged easily and power consumption can be reduced, and a method of driving the same are provided. A memory element 10 of the present invention includes variable resistance elements 11 and 12 whose resistance state changes reversibly between a high resistance state and a low resistance state by applying a voltage of a different polarity between an electrode 1 of one side and an electrode 2 of the other side; the electrode 1 of one side in each element of the two variable resistance elements 11 and 12 is made a common electrode; and the electrode 2 of the other side in each element of the two variable resistance elements 11 and 12 is made independent and is provided respectively with the terminal X and terminal Y, to form a memory cell having two terminals in total. |
