| 发明名称 |
PROCESS FOR MAKING THIN FILM TRANSISTORS BY ATOMIC LAYER DEPOSITION |
| 摘要 |
The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process. |
| 申请公布号 |
EP2193222(A1) |
申请公布日期 |
2010.06.09 |
| 申请号 |
EP20080833592 |
申请日期 |
2008.09.18 |
| 申请人 |
EASTMAN KODAK COMPANY |
发明人 |
NELSON, SHELBY FORRESTER;LEVY, DAVID HOWARD;IRVING, LYN MARIE;COWDERY-CORVAN, PETER JEROME;FREEMAN, DIANE CAROL;ELLINGER, CAROLYN R. |
| 分类号 |
C23C16/455;H01L21/336 |
主分类号 |
C23C16/455 |
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