发明名称 |
METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE |
摘要 |
The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport. |
申请公布号 |
KR20100061832(A) |
申请公布日期 |
2010.06.09 |
申请号 |
KR20107007329 |
申请日期 |
2008.09.02 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
REVANKAR VITHAL;IBRAHIM JAMEEL |
分类号 |
B01D53/40;B01D53/68 |
主分类号 |
B01D53/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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