发明名称 METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE
摘要 The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.
申请公布号 KR20100061832(A) 申请公布日期 2010.06.09
申请号 KR20107007329 申请日期 2008.09.02
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 REVANKAR VITHAL;IBRAHIM JAMEEL
分类号 B01D53/40;B01D53/68 主分类号 B01D53/40
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