| 摘要 |
<p>A method of contact formation, comprises:
depositing an insulator stack material (222) of a particular thickness over a number of gates (116, 118, 216, 218, 316, 318, 616, 618, 1116, 1118) on a substrate (110, 1142);
forming a contact opening (324) between two of the number of gates (116, 118, 216, 218, 316, 318, 616, 618, 1116, 1118) and depositing a filler material (426, 626, 726, 1126) in the contact opening (324);
creating a trench (527, 627) located between a first and a second insulator stack structure (322, 422, 522, 622, 1122) in the insulator stack material (222) by etching the filler material (426, 626, 726, 1126) in the contact opening (324) to a depth (523) below a surface of the first and the second insulator stack structures (322, 422, 522, 622, 1122);
depositing a spacer material (630, 730, 930, 1030, 1130) to at least one side surface of the trench (527, 627);
depositing a conductive material (834, 934, 1034, 1134) into the trench (527, 627); and
depositing a cap material (1036, 1136) into the trench (527, 627).</p> |
