| 摘要 |
<p>Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure (135) comprising a plurality of compound semiconductor layers (110,120,130), an electrode layer (150) on the light emitting structure, a conductive support member (160) on the electrode layer, a conductive layer (140) formed along a peripheral portion of an upper surface of the light emitting structure, and an insulating layer (145) on the conductive layer.</p> |
