| 摘要 |
A memory cell array includes a plurality of non-volatile semiconductor memory elements, each memory element storing data in a non-volatile manner. A shift register stores data read from the semiconductor memory element and sequentially transfers the data outside, the shift register also stores data transferred from outside and stores the data in the semiconductor memory element. A syndrome generation circuit is connected to an output terminal of the shift register, the syndrome generation circuit generating syndrome of data output from the output terminal. An error-correction circuit uses the data and the syndrome to correct an error of the data.
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