发明名称 Manufacturing method of insulating film and semiconductor device
摘要 The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming a plurality of pores in an interlayer insulating film using a laser beam, which results in lower dielectric constant of the interlayer insulating film. In addition, a composition containing conductive particles is discharged onto the porous insulating film by a droplet discharge method typified by an ink jet printing method, and then baked to form a wire. As the laser beam, an ultrashort pulse laser beam is preferably used.
申请公布号 US7732349(B2) 申请公布日期 2010.06.08
申请号 US20050283812 申请日期 2005.11.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAMOTO HIROKO
分类号 H01L21/31;H01L21/324 主分类号 H01L21/31
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