发明名称 |
Method for manufacturing a surface acoustic wave device |
摘要 |
A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
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申请公布号 |
US7730596(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20060329460 |
申请日期 |
2006.01.11 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KADOTA MICHIO;NAKAO TAKESHI;MIMURA MASAKAZU |
分类号 |
H01L41/09;H01L41/22;H01L41/00;H01L41/18;H03H3/08;H03H9/02;H03H9/145;H03H9/25 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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