发明名称 Semiconductor thin film, thin film transistor, method of manufacturing the semiconductor thin film, method of manufacturing the thin film transistor, and manufacturing device of semiconductor thin film
摘要 A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.
申请公布号 US7732815(B2) 申请公布日期 2010.06.08
申请号 US20070836312 申请日期 2007.08.09
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 TAKEGUCHI TORU;YURA SHINSUKE
分类号 H01L29/10;H01L29/76;H01L31/112 主分类号 H01L29/10
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