发明名称 |
Semiconductor thin film, thin film transistor, method of manufacturing the semiconductor thin film, method of manufacturing the thin film transistor, and manufacturing device of semiconductor thin film |
摘要 |
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.
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申请公布号 |
US7732815(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20070836312 |
申请日期 |
2007.08.09 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
TAKEGUCHI TORU;YURA SHINSUKE |
分类号 |
H01L29/10;H01L29/76;H01L31/112 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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