| 摘要 |
A solid-state image pickup device comprises: a semiconductor substrate; at least one photoelectric converting film that generates signal charges corresponding to an amount of incident light; at least one set of pixel electrode films arranged in row and column directions and attached to said at least one photoelectric converting film; vertical transfer paths in the semiconductor substrate, extended in the column direction; and charge accumulating portions in the surface portion of the semiconductor substrate that accumulate signal charges from the pixel electrode films, wherein the charge accumulating portions comprise a plurality of sets, each comprising a subset of the charge accumulating portions arranged in the column direction, and wherein the subset reads out the accumulated signal charges to the corresponding one of the vertical transfer paths, and wherein the two adjacent subsets of the charge accumulating portions are shifted to each other in a direction along the vertical transfer paths.
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