| 摘要 |
A method of fabricating a semiconductor device is provided. Spacers can be formed on adjacent gate structures and used as an ion implantation mask for forming source/drain regions. The spacers can include a nitride layer and an oxide layer. An etch stop layer can be provided between the gate structures, and the oxide layer can be removed from the spacers. A first oxide layer formed below the nitride layer can be protected from being etched away during removal of the oxide layer from the spacers by the etch stop layer. The etch stop layer and the first oxide layer can be removed, and an interlayer dielectric layer can be deposited.
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