发明名称 |
Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor |
摘要 |
This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.
|
申请公布号 |
US7732832(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20060587662 |
申请日期 |
2006.10.26 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L33/00;H01L33/02;H01L33/06;H01L33/16;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|