发明名称 Flash memory device and erase method thereof
摘要 A flash memory device and an erase method thereof are included. The erase method includes performing an erase operation of a memory cell block including a plurality of pages, performing an erase verify operation and storing unerased page information about a page including unerased memory cells that have not been normally erased, and performing an additional erase operation of the page including the unerased memory cells based on the unerased page information. When the unerased memory cells exist, the erase verify operation and the additional erase operation are performed repeatedly.
申请公布号 US7733706(B2) 申请公布日期 2010.06.08
申请号 US20070856697 申请日期 2007.09.17
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WANG JONG HYUN
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
主权项
地址