发明名称 |
Method of manufacturing semiconductor element |
摘要 |
A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.
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申请公布号 |
US7732272(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20030677221 |
申请日期 |
2003.10.03 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
OHSAKO TAKASHI;MORI HIROTAKA;YOSHIDA KATSUJI |
分类号 |
H01L21/28;H01L21/8238;H01L21/3205;H01L21/336;H01L21/4763;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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