发明名称 |
Charge-trap type non-volatile memory devices and related methods |
摘要 |
Methods of forming a non-volatile memory device may include forming a tunnel insulating layer on a semiconductor substrate and forming a charge-trap layer on the tunnel insulating layer. A trench may then be formed extending through the tunnel insulating layer and the charge-trap layer and into the semiconductor substrate so that portions of the charge-trap layer and the tunnel insulating layers remain on opposite sides of the trench. A device isolation layer may be formed in the trench, and a blocking insulating layer may be formed on the device isolation layer and on remaining portions of the charge-trap layer. A gate electrode may be formed on the blocking insulating layer, and the blocking insulating layer and remaining portions of the charge-trap layer may be patterned to provide a blocking insulating pattern and a charge-trap pattern between the gate electrode and the semiconductor substrate. Related structures are also discussed.
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申请公布号 |
US7732856(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20070724870 |
申请日期 |
2007.03.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM JAE-SUNG;CHOI JUNG-DAL;KANG CHANG-SEOK |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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