发明名称 Epitaxial layer structures and precursors for topotactic anion exchange oxide films
摘要 This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
申请公布号 US7732067(B2) 申请公布日期 2010.06.08
申请号 US20070962890 申请日期 2007.12.21
申请人 ZURBUCHEN MARK A 发明人 ZURBUCHEN MARK A.
分类号 B32B9/00 主分类号 B32B9/00
代理机构 代理人
主权项
地址