| 发明名称 |
PLANAR SUBSTRATE WITH SELECTED SEMICONDUCTOR CRYSTAL ORIENTATIONS FORMED BY LOCALIZED AMORPHZATION AND RECRYSTALLIZATION OF STACKED TEMPLATE LAYERES |
| 摘要 |
A method utilizing localized amorphization and recrystallization of stacked template layers is provided for making a planar substrate having semiconductor layers of different crystallographic orientations. Also provided are hybrid-orientation semiconductor substrate structures built with the methods of the invention, as well as such structures integrated with various CMOS circuits comprising at least two semiconductor devices disposed on different surface orientations for enhanced device performance. |
| 申请公布号 |
KR100961800(B1) |
申请公布日期 |
2010.06.08 |
| 申请号 |
KR20067010604 |
申请日期 |
2004.11.30 |
| 申请人 |
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| 分类号 |
H01L27/12;H01L21/20;H01L21/336;H01L21/762;H01L21/8238;H01L21/84;H01L27/092;H01L29/04;H01L29/10;H01L29/786 |
主分类号 |
H01L27/12 |
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