发明名称 Semiconductor device having a interlayer insulation film with low dielectric constant and high mechanical strength
摘要 The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.
申请公布号 US7732927(B2) 申请公布日期 2010.06.08
申请号 US20070944053 申请日期 2007.11.21
申请人 FUJITSU LIMITED 发明人 SUDA SHOICHI;TOKUYO SHINO;NAKATA YOSHIHIRO;MATSUURA AZUMA
分类号 H01L23/48 主分类号 H01L23/48
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