METHOD FOR FORMING THE RESISTANCE VARIABLE MEMORY DEVICE

摘要

PURPOSE: A method for forming a resistance variable memory device is provided to reduce a manufacturing time of a variable resistance memory by forming an amorphous semiconductor layer and improving the speed of forming a diode. CONSTITUTION: In a method for forming a resistance variable memory device, an insulating layer having an opening on a substrate(100) is formed. An epilayer(130) is formed on the opening from the substrate by a first height(A1). An amorphous semiconductor layer(140) is formed on the epilayer. The amorphous semiconductor layer and the epilayer are recessed by a second height. The first height is higher than the second height.