FABRICATING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES

摘要

PURPOSE: A fabricating method of semiconductor integrated circuit devices are provided to form a spacer layer on a hard mask pattern with conformal by forming a line spacer with a low temperature oxide film. CONSTITUTION: A hard mask layer is formed on a semiconductor substrate(100). A first etching mask including a plurality of first line patterns is formed on the hard mask layer. The hard mask layer is etched and the first hard mask pattern is formed. A second etching mask including a plurality of second line patterns is formed in the first hard mask pattern. The first hard mask pattern is etched to form the second hard mask pattern(122). The spacer(131) is formed in the sidewall of the second hard mask pattern.